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PTF 10007 35 Watts, 1.0 GHz GOLDMOS (R) Field Effect Transistor
Description
The PTF 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. * Performance at 960 MHz, 28 Volts - Output Power = 35 Watts - Power Gain = 13.5 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% lot traceability Available in Package 20235 as PTF 10052
* * * * *
Typical Output Power & Efficiency vs. Input Power
50 Output Pow er (W) 40 80 Ef f iciency (%) 60 40 20 0 0 1 2 3 100
1 A -1 2000 3456 7 9723
Efficiency
Package 20222
Output Power
30 20 10 0
VDD = 28 V IDQ = 300 m A f = 960 MHz
Package 20235
A-1 234 569 999
100 52
Input Power (Watts)
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RqJC
Symbol
VDSS VGS TJ PD
Value
60 20 200 120 0.7 -40 to +150 1.4
Unit
Vdc Vdc C Watts W/C C C/W
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1
PTF 10007
Electrical Characteristics (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance
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Conditions
VGS = 0 V, ID = 5 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A
Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 -- 3.0 --
Typ
70 -- -- 2.8
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 300 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz-- all phase angles at frequency of test)
Symbol
Gps P-1dB h Y
Min
12.0 35 50 --
Typ
13.5 -- 55 --
Max
-- -- -- 10:1
Units
dB Watts % --
Typical Performance
POUT, Gain & Efficiency (at P-1dB) vs. Frequency
Output Power & Efficiency
30 25 20 70
Broadband Test Fixture Performance
20
Efficiency (%)
Efficiency (%)
60 50
16
50
Gain (dB)
Gain
Gain
VDD = 28 V IDQ = 300 mA POUT = 35 W
Return Loss (dB)
40
-30 5 -15 20
15 10 5 0 400
12
VDD = 28 V IDQ = 300 mA
500 600
Output Pow er (W)
30 20 1000
8
10 -25 0 -35 960
700
800
900
4 925
930
935
940
945
950
955
Frequency (MHz)
Frequency (MHz)
2
Return Loss
G a in (d B )
40
Efficiency
60
e
Typical Performance
Power Gain vs. Output Power
17 16 15 14 13 12 11 0.1 1.0 10.0 100.0
-10 -20
PTF 10007
Intermodulation Distortion vs. Output Power
VDD = 28 V IDQ = 300 m A f1 = 960.000 MHz f2 = 960.100 MHz
3rd
Power Gain (dB)
IDQ = 300 mA
IMD (dBc)
-30 -40 -50 -60 0
IDQ = 150 mA IDQ = 75 mA
VDD = 28 V f = 960 MHz
5th 7th
10
20
30
40
50
Output Power (Watts)
Output Power (Watts-PEP)
Output Power vs. Supply Voltage
45
Capacitance vs. Supply Voltage
120 40 100 80 60 40 20 0
Output Power (Watts)
Cds and Cgs (pF)
25 20
35
Cds Crss
0 10 20 30 40
15 10 5 0
30 22 24 26 28 30 32 34
Supply Voltage (Volts)
Supply Voltage (Volts)
Bias Voltage vs. Temperature
1.03 1.02 Voltage normalized to 1.0 V Series show current (A)
0.3 0.87 1.44 2.01 2.58 3.15
Bias Voltage (V)
1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20
30 Temp. (C)
80
130
3
Crss (pF)
40
IDQ = 300 mA POUT = 5 W f = 960 MHz
VGS =0 V f = 1 MHz
35 30
Cgs
PTF 10007
Impedance Data (shown for fixed-tuned broadband circuit)
VDD = 28 V, POUT = 35 W, IDQ = 300 mA
D
e
Z0 = 50 W
Z Source
Z Load
G S
Frequency
MHz 850 900 950 1000 R
Z Source W
jX -2.80 -1.65 -0.30 0.88 R 1.48 1.45 1.35 1.10
Z Load W
jX 1.55 2.30 3.40 4.15 2.60 2.60 2.68 2.70
Typical Scattering Parameters
(VDS = 28 V, ID = 2.0 A)
f (MHz)
400 420 440 460 480 500 520 540 560 580 600 620 640 660 680 700 720 740 760 780 800 820 840 860 880 900 920 940 960 980 1000
S11 Mag
0.948 0.951 0.955 0.956 0.957 0.959 0.960 0.962 0.963 0.964 0.964 0.965 0.967 0.966 0.967 0.967 0.968 0.968 0.967 0.966 0.967 0.968 0.967 0.967 0.967 0.966 0.966 0.966 0.966 0.966 0.965
S21 Ang
-167 -168 -168 -168 -168 -168 -169 -169 -169 -169 -169 -169 -169 -170 -170 -170 -170 -170 -170 -170 -170 -170 -170 -170 -170 -170 -171 -171 -171 -171 -171
S12 Ang
33 32 30 29 28 27 26 25 24 22 22 21 21 20 19 18 18 17 17 17 16 16 15 15 14 14 14 14 13 13 12 4
S22 Ang
-37 -37 -37 -36 -38 -35 -34 -30 -29 -28 -23 -20 -13 -6 3 8 21 25 33 44 51 55 59 67 68 73 75 79 81 83 86
Mag
3.668 3.403 3.161 2.943 2.745 2.575 2.421 2.282 2.151 2.024 1.907 1.806 1.72 1.636 1.558 1.483 1.413 1.345 1.281 1.228 1.179 1.134 1.088 1.039 0.993 0.957 0.922 0.890 0.859 0.827 0.794
Mag
0.006 0.005 0.005 0.005 0.004 0.004 0.004 0.004 0.003 0.003 0.003 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.003 0.003 0.003 0.003 0.003 0.004 0.004 0.004
Mag
0.858 0.866 0.877 0.886 0.892 0.898 0.903 0.907 0.911 0.913 0.919 0.925 0.929 0.929 0.929 0.928 0.930 0.932 0.935 0.937 0.938 0.939 0.938 0.938 0.938 0.941 0.943 0.941 0.942 0.943 0.942
Ang
-149 -150 -151 -152 -152 -153 -153 -154 -155 -155 -156 -156 -156 -157 -157 -157 -158 -158 -159 -159 -159 -159 -160 -160 -160 -161 -161 -161 -161 -161 -162
e
Test Circuit
PTF 10007
Test Circuit Schematic for f = 960 MHz DUT C1, C5 C2 C3 C4 C6, C8 C7, C9 C10 L1 R1 R2 PTF 10007 39 pF, Capacitor ATC 100 B 7.5 pF, Capacitor ATC 100 B 0.6-6.0 pF, Trimmer Capacitor, Johanson, 5701-PC 0.35-3.5 pF, Trimmer Capacitor, Johanson, 5801-PC 51 pF, Capacitor ATC 100 B 0.1 mF, 50 V, Capacitor, Digi-Key P4917-ND 100 mF, 50 V, Electrolytic Capacitor, Digi-Key P5276 4 Turn, #20 AWG, .120" I.D. 1 K, 1/4 W Resistor 10 K, 1/4 W Resistor Microstrip 50 W 0.185 l 960 MHz Microstrip 5.70 W 0.240 l 960 MHz Microstrip 9.30 W .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper
l1, l4 l2 l3
Circuit Board
Parts Layout (not to scale)
5
PTF 10007
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Artwork (not to scale)
Package Mechanical Specifications Package 20222
Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. LF (c) 1997, 1998, 1999, 2000 Ericsson Inc. EUS/KR 1522-PTF 10007 Uen Rev. C 11-09-00
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